
Publication Detail
Authors of Publication | Ullah K, Riaz S, Habib M, Abbas F, Naseem S, Shah I and Bukhtiar A |
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Title of Publication | “Effect of channel doping concentration on the impact ionization of n-channel fully depleted SOI MOSFET” |
Name of Journal | International Journal of Engineering Works |
Volume | 2 |
Impact Factor (IF) | - |
Hec Recognization | Y |
Other | - |
Conference Proceeding | - |
Year of Publish | 2015 |