
Publication Detail
Authors of Publication | Rehman F, Hai-Bo J, Jing-Bo Li, Bukhtiar A, Khalid M, Rizwan M, Riaz S and Naseem S |
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Title of Publication | “Simulations of transient behavior and parasitic affects for 20 nm gate length of PD SOI nMOSFET” |
Name of Journal | Materials Today: Proceedings |
Volume | 2 |
Impact Factor (IF) | - |
Hec Recognization | Yes |
Other | - |
Conference Proceeding | Yes |
Year of Publish | 2015 |