Publication Detail

Authors of Publication	Rehman F, Hai-Bo J, Jing-Bo Li, Bukhtiar A, Khalid M, Rizwan M, Riaz S and Naseem S
Title of Publication	“Simulations of transient behavior and parasitic affects for 20 nm gate length of PD SOI nMOSFET”
Name of Journal	Materials Today: Proceedings
Volume	2
Impact Factor (IF)	-
Hec Recognization	Yes
Other	-
Conference Proceeding	Yes
Year of Publish	2015

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